Sentence examples for separation layers were grown from inspiring English sources

The BaTiO3 separation layers were grown repeatedly in perfect layer-by-layer mode on the irregular interface of strained NCs layers, which smoothed the irregular growth front formed in the self-assembled process of Ni NCs and provided a flat substrate for the next strained Ni NCs layer.

The GaAs layers were grown directly on 3-in.

The SiGe layers were grown on 8-in.

The indium-containing layers were grown at approximately 485°C, while the (Al)GaAs layers were grown at approximately 580°C.

Finally, a 10 nm thick GaN cap layer was grown.

The InAs layer is grown at 500 °C.

The InGaN layer was grown at 550°C.

This layer was grown via atomic layer deposition (ALD) [5].

The SiO2 layer was grown by thermal oxidation.

The GaAs cap layers and QDs were grown at 540°C.

A 3 nm Al2O3 separation layer was included in the simulations to account for the surface oxide of Al.