Sentence examples for semiconductors by using from inspiring English sources

In this paper, we study cracks in two-dimensional n-type piezoelectric semiconductors by using the displacement discontinuity method.

On the basis of the viewpoint of structure property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity and principal quantum number.

It is shown how the photoresponse (e.g. photocurrent) may be amplified (from a low level typical of the signal emanating from a ∼10−11 cm2 region corresponding to a semiconductor nanodot) by using a large number of electrically inter-connected Au nanowires to support the overlying semiconductor nanodots.

Eventually, Schmergel says, nanotubes could replace every part of semiconductor devices by using all of the tubes' features.

Xie, Q. et al. Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer.

Indeed, quadrature squeezing of about 4% was observed in a planar semiconductor microcavity, by using degenerate polariton four-wave mixing in 2004 (ref. 11).

We made photonic crystals composed of artificial opals infiltrated with ZnS semiconductor nanocrystals by using self-assembly and solvothermal methods.

Moreover, MLG can be changed from metallic to semiconductoring properties by using oxygen plasma treatment, and we investigate the defects evolution of the graphene after exposing to oxygen plasma by Raman spectra.

Another possibility to change a property of a semiconductor is by using solid solution, such as Cd1−xZn x Te[16] and Si1−xGe x [17], which change the component content.

The method of fabrication of ordered nanodroplets presented in this study provides another essential step towards fabrication of advanced semiconductor nanostructures by using droplet epitaxy.

To improve the interfacial and thermal properties, gate dielectric engineering has been successfully adopted in high-k/III V compound semiconductor techigh-k/III Vsing a compoundion of Al2O3 and HfO2 filmsemiconductor