Exact(5)
In conventional silicon transistors, electrons pass through the semiconductor without interacting with the insulator.
They apply an electric field onto an ultrathin sheet of their special material, thereby making it a semiconductor without adding any chemical "doping impurities"—the irreversible process often used by industry.
Despite the modest IPCE values of the W/NC electrodes (due to high bulk recombination and poor electron transport properties of the electrodes), our data shows that the incorporation of an optimal amount of nanoporous carbon additive to WO3 can enhance the carrier mobility of the semiconductor, without promoting additional recombination pathways or shadowing of the photoactive oxide.
To overcome this difficulty, the SO interaction may be useful for the spin injection into semiconductor without ferromagnets.
This makes it difficult to fabricate surface MOS devices but does create the potential for UV radiation to get to the active semiconductor without absorption in a surface layer.
Similar(55)
The device achieves focal Electric Capacitive Stimulation (ECS) by coupling of single cells and semiconductors, without electrochemical reaction with the substrate.
In this paper it is shown that the gavanic initiation process is also sutable for the direct metallization of semiconductors without a previous activation step of the surface.
Recently, extensive attention has been paid to the direct Z-scheme systems for photocatalytic water splitting where carriers migrate directly between the two semiconductors without a redox mediator.
Here we report the creation of van der Waals metal semiconductor junctions in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning.
However, passivation of dangling bonds by different chemical species was widely used to investigate a band-gap variation with NW diameter [7,8,22-27], while bare zinc-blende NWs with {112} facets and any bare wurtzite NW turned out to be semiconductors without passivation [3,5,9,10].
To the best of our knowledge, this is the highest efficiency reported for devices comprising any isoindigo-based molecular semiconductors without the use of solvent additives.
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