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The wavelength depends on the semiconductor compound.
ZnO is a II VI semiconductor compound that has been studied due to its wide range of applications in nanosystems.
Currently, there is a new rapidly emerging direction of modern nanotechnology research in the fabrication of porous semiconductor compound materials.
GaAsBi is a group II I Vsemiconductor compound that is actively investigated for GaAs-based infrared radiation emitters [1] and detectors [2 5].
The analysis of cyclic voltammetry curves for joint reduction of two, three and four ions composed this semiconductor compound allowed to choose the optimal conditions for electrodeposition.
Cu2ZnSnS4(CZTS) is non-toxic earth abundant material and a promising quaternary semiconductor compound of group I-II-IV-VI having kesterite symmetrical structure.
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Motorola, which said in September that it had discovered a method to deposit gallium arsenide and other high-performance semiconductor compounds on silicon substrates, said yesterday that it had licensed the technology to IQE, a supplier of wafers to microchip manufacturers.
ZnS is one of the most crucial II to VI semiconductor compounds [12].
Among the II I Vsemiconductor compounds, GaAs quantum dots (QDs) is of great importance for fundamental quantum confinement effect studies.
For doped nanocrystalline semiconductor compounds, confinement effects in the energy states also produce unusual physical and optical behavior.
This represents an important step towards the synthesis of II IV semiconductor compounds such as cadmium telluride.
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