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The SET process demonstrates a self-compliance behaviour.
Figure 7 Self-compliance I - V switching characteristics and fitting.
Figure 7a shows self-compliance bipolar current voltage characteristics of our cross-point memory device.
The insulating Hf N Ox vacancy clusters (Vo+) protect the device from hard breakdown and perform a self-compliance property.
All size devices have shown self-compliance bipolar switching with small set/rest voltage of -1.0/2.0 V.
During the self-compliance process of trapping-type RRAM, excessive oxygen vacancies are generated inside the switching layer [7].
Thus, because of thickness-dependent W TE resistivity as well as device size, the self-compliance resistive switching characteristics differ.
(a) Self-compliance Repeatable I-V hysteresis loop of our IrO x /GdO x /W cross-point memory devices.
The self-compliance property shows the built-in capability of the device to minimize the current overshoot during switching in one resistance (1R) configuration.
The self-compliance behavior which comes from the bulk resistance of the stack shows the built-in capability of the device to minimize current overshoot during switching.
All materials are CMOS compatible, and the self-compliance (SC) resistive switching phenomena with a low operation voltage of ±2.5 V are reported.
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