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SCM image of the same area.
Figure 2 shows the topography and SCM image.
The SCM image and signal variation with DC bias is shown in Figure 3a.
Figure 4 SCM image (a) and signal (b) versus different AC bias.
A cross section of the SCM image across a NC is shown in Figure 7.
The contrast between Si-nc and the oxide layer was clear in SCM image which indicates that the Si-nc has different capacitance from the oxide layer.
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Figure 3 SKM, CAFM, and SCM images (left column) and 3D views (right column) of BPA-etched GeSi QR.
NCs deep below the surface are revealed in SCM images, and are not shown in the morphology measured simultaneously.
Figure 2 SKM, CAFM, and SCM images (left column) and 3D views (right column) of an original GeSi QR.
The SCM contrast was clear; however, comparison of SCM images with secondary electron microscopy and AFM images shows that the quantum dots cannot be resolved by SCM [7].
SCM images were taken with a fixed bias frequency of 50 kHz, SCM lock-in phase of 90°and capacitance sensor frequency of 910 MHz.
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