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This method will be referred to as scanning tip DLTS.
The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface.
The scanning tip DLTS spectra are similar to large area Schottky junctions.
The measured scanning tip C-V characteristic outside the Fe deposition is shown in Figure 4a.
The scanning tip DLTS frequency scan spectrum measured in the same position is shown in Figure 4b.
Chemical modification could be followed quantitatively by measuring the interaction force between the scanning tip and the mica surface.
The results demonstrate that SCM and scanning tip DLTS are able to identify defects in semiconductors with high spatial resolution.
We suppose that it is due to the electrical interaction of NCs with the vibrating scanning tip.
Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction.
The contact shear strength could correlate with dehydration enthalpy that must be overcome by the scanning tip.
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