Sentence examples for samples implanted with from inspiring English sources

There was significant change in areas such as roughness, grain size, its distribution for the un-implanted sample, and samples implanted with argon ions.

In the case of samples implanted with carbon, the TD concentration was calculated from the conductivity measurements of implanted Si layer after annealing.

Figure 1 Deuterium thermodesorption spectra from 18Cr10NiTi steel samples implanted with different doses of deuterium ions.

Some variation was noted between samples implanted with different ions and at different doses.

Figure 3a, b shows the complex impedance plane plots of the MCT samples implanted with B+ and Ag+ ions.

Fig. 3 Impedance spectra (Nyquist plots) for MCT samples implanted with B+ (a) and Ag+ (b) ions.

Magnetically modulated microwave absorption (MMMA), magnetization and resistance measurements showed that the superconducting transition onset temperature Tconset shifted from about 13 K in the best magnesium sample implanted with single-energy B ions, to 22 28 K for multi-energy implantation treatments.

Fig. 4 Bode plots for real (a) and imaginary (b) part of admittance of MCT sample implanted with Ag+ ions.

A sample implanted with a dose of 1 × 1017 cm− 2 shows a broad photo luminescence peak centered around 880 nm after annealing.

Accounting for the geometry of the wire, the corresponding volume killer center densities are obtained as the following: 6.1·1017 cm-3 for the sample annealed at 600°C (b), 9.4·1017 cm-3 for the sample implanted with lower neon fluences (c), 1.3·1018 cm-3 for the sample implanted with higher neon fluences (d) and 1.8·1018 cm-3 for the sample annealed at 300°C (a), respectively.

The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3×1017 cm−2 dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si3N4 compound occurred.