Sentence examples for sample implanted with from inspiring English sources
Magnetically modulated microwave absorption (MMMA), magnetization and resistance measurements showed that the superconducting transition onset temperature Tconset shifted from about 13 K in the best magnesium sample implanted with single-energy B ions, to 22 28 K for multi-energy implantation treatments.
Fig. 4 Bode plots for real (a) and imaginary (b) part of admittance of MCT sample implanted with Ag+ ions.
A sample implanted with a dose of 1 × 1017 cm− 2 shows a broad photo luminescence peak centered around 880 nm after annealing.
Accounting for the geometry of the wire, the corresponding volume killer center densities are obtained as the following: 6.1·1017 cm-3 for the sample annealed at 600°C (b), 9.4·1017 cm-3 for the sample implanted with lower neon fluences (c), 1.3·1018 cm-3 for the sample implanted with higher neon fluences (d) and 1.8·1018 cm-3 for the sample annealed at 300°C (a), respectively.
In order to observe the effect of H ions on the Er+ diffusion in KTiOPO4, the sample implanted with 400 keV Er+ was irradiated by 50 keV H+ to a fluence of 4×1016 ions/cm2.
The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3×1017 cm−2 dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si3N4 compound occurred.
There was significant change in areas such as roughness, grain size, its distribution for the un-implanted sample, and samples implanted with argon ions.
In the case of samples implanted with carbon, the TD concentration was calculated from the conductivity measurements of implanted Si layer after annealing.
Some variation was noted between samples implanted with different ions and at different doses.
Figure 1 Deuterium thermodesorption spectra from 18Cr10NiTi steel samples implanted with different doses of deuterium ions.
Micro-particles of precipitates can be found for all the sapphire samples implanted with different ion species after annealing.
