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In oxygen rich silicon the deep acceptor is largely suppressed while the BD generation is strongly enhanced.
Chemical analysis shows that carbon is accumulated at the dielectric/wafer interface due to a barrier formation inside the carbon rich silicon.
The photonic crystal structures are fabricated using silicon rich silicon nitride and silicon oxynitride thin films deposited by PECVD at 200 °C.
The silicon rich silicon oxide thin films are grown by ABS technique with target consisting of 60% silicon-in-excess + SiO2.
For DRAMs based on deep trench capacitors, the main focus regarding defects is on voids, so-called crystal originated pits (COPs), which are present in the commonly used vacancy rich silicon crystals.
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silicon-rich silicon oxide.
silicon-rich silicon nitride.
Thin films of silicon-rich silicon oxide are deposited by wide source ABS technique.
Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers.
SiNCs are usually grown from a silicon-rich silicon oxide (SRSO).
X-ray photoelectron spectroscopy showed formation of silicon-rich silicon nitride.
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