The ribbon width represents the total number of sequences from an OTU that belong to a sample pool.
At higher clay concentrations, the ribbon width increases when the electric field is increased, as shown in Fig. 5.
Conductance measurements at 4 K show an energy gap, that increases with decreasing ribbon width.
For Al doped ASiNRs, we find that the magnetic moment and band gap are dependent on the ribbon width.
While for P doped ASiNRs, the magnetic moment always keeps 1μB and is independent of the ribbon width, meanwhile the band gap oscillates with a period of three with the ribbon width increasing.
Further analysis shows that this interesting change arises from the decrease of the effective ribbon width induced by dihydrogenation.
We plot the resonance frequency position of this mode as a function of gate-voltage tuning for devices with different ribbon width in Fig. 2e.
Meanwhile, an energy band gap Eg, depending on the ribbon width and the field strength, is induced.
Namely, armchair GNRs exhibit a strong dependence of the transport properties on the ribbon width, as a consequence of different valence bond representations.
From our findings, it is found that the ribbon width plays a crucial role in determining the electronic phase of disordered ABNNRs.
Interestingly, with the increase of the ribbon width, the energy gap of the AGNRs with B/N pair doping is oscillatory.
