Sentence examples for ribbon device from inspiring English sources

Here we can see that in the ribbon device, there is no difference in the size or shape of the kink behavior (Figure 10(b)), and only a minor difference in transconductance.

If the same scattering mechanisms prevail in the planar and ribbon device, the current in both cases is decreased by the same amount, and thus, the ratio between Eq. 2 and Eq. 4 remains unaltered, thus not impacting our analysis.

From the ribbon device data in Figure 9(a), we can expect to see dissipated electrical power P=I V of up to ≈350 kW/cm2, though power dissipation may be lower in the optimal operating regime for device applications.

A nanoscale logic NOR gate has been theoretically designed by magnetic flux inputs in a Z-shaped graphene nanoribbon composed of an armchair ribbon device sandwiched between two semi-infinite metallic zigzag ribbon leads.

I V sd characteristics at constant V bg =0 with V tg varying from 0 to -8 V, measured at T=77 K and T=300 K for (a) a ribbon device (W≈50 nm) and (b) a wide graphene device (W=200 nm).

As a straightforward method to directly compare ribbon devices with wide devices, we compare the scaled current density per width j=I/W for two devices, a ribbon device with width W≈50 nm and a wide device with W=200 nm, both with length L=500 nm, shown in Figure 10.

Current-voltage characteristics at varying gate voltages were measured for 17 ribbon devices with a range of widths and lengths, and three "wide" devices with W = 200 nm, in order to compare to the behavior of non-ribbon devices.

We suggest that our measured phonon energy corresponds to the SiO2 surface phonon energy ℏ Ω = 55 meV [29 31], although we note that values measured in other ribbon devices of different geometries vary widely (from ≈22 meV to ≈120 meV), possibly due to discrepancies in determining the relevant device geometry, the corresponding capacitance, and the position of the charge neutrality point.

For ribbon devices, the geometry is not well approximated by a parallel plate capacitor, so the gate capacitance was calculated numerically.For the device in Figure 5, the capacitance was calculated to be 47.5 nF/cm2 using a numerical calculation based on the finite element method.

This leads to the question, how are nanoribbons different from wide, non-ribbon devices when operated at high bias?

In 2011, Department of Defense instructions were amended to read "for each succeeding act that would otherwise justify award of the Medal of Honor, the individual receiving the subsequent award is authorized to wear an additional Medal of Honor ribbon and/or a 'V' device on the Medal of Honor suspension ribbon".