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This feature shows "reverse characteristics" which is opposite to those of regular short transmission lines.
The influence of the surface coverage on the forward and reverse characteristics is depicted.
These diodes are better in terms of observed Schottky barrier height and reverse characteristics.
1) The HWACT line shows "reverse characteristics" opposite to those of regular short transmission lines.
The research indicates that the relationship between PP and terminal voltages also shows "reverse characteristics".
The reverse characteristics of these devices are also quite good as compared to those of other Schottky metal combinations.
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The simulation of the reverse characteristic predicts a breakdown voltage of 225 V.
We have previously demonstrated that EGF dependency is related to the lack of tuberin, and TSC2-transfection and induction of tuberin expression reverse this characteristic feature [ 14– 17].
Figure 4 shows the 1/C2 versus reverse voltage characteristics measured at a frequency of 1 MHz at room temperature.
Satisfactory reverse blocking characteristics also could be achieved with a breakdown field of 2.7 MV/cm for small size diodes.
Advanced constitutive models were employed to capture the plastic anisotropy, reverse loading characteristics such as the Bauschinger effect, and elastic modulus degradation.
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