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We trivially have the reverse, i.e., (X_{t}=0 Rightarrow X_{t}^=0).
We repeatedly apply the SAT process to the same scene in reverse, i.e., we track the fish forward-backward.
(No male-bashing here -- this scenario also works in reverse, i.e. gals cheat on guys too!).
The politicians are intent to do the reverse, i.e., reducing government expenditures and raising taxes on some people.
Although distinct TFT behavior is recorded for both reference IBZO and ISZO devices, there is a reduction in the drain current and the presence of a large hysteresis between forward and reverse I– V sweeps.
The reverse (i.e., overestimation) has been reported with parents of healthy children [e.g., [ 13, 18, 19]].
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Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height.
The series resistance dominates the forward, and leakage resistance dominates the reverse I-V characteristics in samples where the NCs migrated near the silicon surface.
(2) Figure 3 Semilog forward and reverse I-V characteristics for Pt/n-GaN Schottky diode at 100 to 340 K.
The thermal activation of the leakage resistance was evaluated by linear fits to the reverse I-V and by plotting the fitted resistance values as a function of reciprocal temperature.
(a) Forward I-V characteristics and reverse I-V characteristics and (b) low-current I-V characteristics and ideality factor comparison. Figure 6 The LOP as a function of the forward current.
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CEO of Professional Science Editing for Scientists @ prosciediting.com