Figure 7 Data retention and read endurance characteristics.
Reliability characteristics of ac/dc cycling endurance, data retention, and read durability were measured.
To investigate the reliability characteristics of the memory devices, dc/ac cycling endurance, data retention, and read durability were measured.
However, the direct tunneling cannot be turned off at a low electric field, leading to poor retention and read disturb.
This paper shows the operation and reliability aspects of 2T N-type SONOS memories: endurance, retention and read disturb.
d I-V hysteresis characteristics are shown similar of (b) after light turned off condition Fig. 6 Data retention and read endurance after light illumination.
In order to further confirm the reliability and performance of two-sided GO device, set response time, retention properties, and read disturbance immunity are tested, which are shown in Figures 22, 23, and 24. Figure 22 Set process response time testing.
Memory device performs good data retention and long read pulse endurance of >105 cycles after white-light illumination.
Reliability tests indicate that the memory cells consisting of Pt/ZnO/Pt possess good ac cycling endurance (>106 cycles), data retention (>168 h), and read durability (>106 times).
Not only in educational setting but in learning contexts, there were also researches proving the concept/knowledge map to be more effective for attaining knowledge retention and transfer than reading text-based learning contents (McCagg and Dansereau 1991; John and Olusola 2006), and more beneficial working as navigational aids than a contents list (McDonald and Stevenson 1998).
