Sentence examples for respectively attributed to from inspiring English sources

Adapting with greater precision the analytical approach of his colleague Nestorius, Theodoret in his principal works, On The Incarnation and Eranistēs ("The Beggar"), written about 431 and 446, respectively, attributed to Christ an integral human consciousness with a distinct psychological ego.

Two exothermic peaks at 238.5 and 370.9 °C were respectively attributed to the decomposition of gel and residual substances mentioned in DTG analysis.

The bands at 3,623 cm-1 and at 3,698 cm-1 are respectively attributed to the –OH stretch of Al OH and that of Si OH [25].

Two sharp endothermic peaks for DSC spectrum of LiNaSO4 in position at about 521 and 615 °C are, respectively, attributed to a phase transition from hexagonal to body-centered cubic (bcc) phase and the melting of LiNaSO4 [20].

The peaks centered at 284.6, 286.4, 287.8, and 289.3 eV may be, respectively, attributed to C C/C=C, C O or alkoxy, C=O, and O C=O groups.

Interestingly, polyhydrazides 31 and 32 exhibited second stages weight losses 15.35% at 308°C and 35.36% at 334°C, respectively, attributed to the loss of the terminal OAc and dehydrative cyclization (15.70%) in case of 31 while debloking of the pendant group (35.38%) in case of polymer 32.

Only 16% and 18% of this surplus on conventional and organic farms, respectively, was attributed to surplus derived from off-farm production of purchased feed and animals.

These exothermic transitions, with peak temperatures of 74 80 °C and 115 132 °C, respectively, were attributed to disorder-order transitions of different kinds.

The N1s spectra are decomposed into two peaks which are located at 398.5 and 400.5 eV, respectively, being attributed to sp3 and sp2 C-N bondings [23] correspondingly.

The enhancements of η and J sc of 28.8% and 26.22%, respectively, are attributed to the reduction of the optical reflection loss and surface recombination.

The growth of core NiSi nanowires followed the nucleation limit silicide reaction while the formation of crystalline Si and amorphous SiC shell at 1450 and 1850 °C, respectively, were attributed to surface diffusion of the growth precursors.