Sentence examples for resistive behaviour from inspiring English sources

This high turn-on voltage (Von) can be attributed to the electrical injection that involves two barriers coming from the wire/Si and wire/tip interfaces in addition to the resistive behaviour of the Si substrate.

Also, for minimizing the partly resistive behaviour of pseudo joint relative to the mechanism motion, material and geometric features of small flexural pivot can be used as design variables.

The time constant (τ 0) represents a transition for the supercapacitor between a resistive behaviour for frequency higher than 1/τ 0 and a capacitive behaviour for frequencies lower than 1/τ 0. Hence, the observed time constant value of 0.2 s indicates that the present system can be efficiently used at low frequencies.

As can be seen, while the morphology of the oxidized regions remains practically unchanged with respect to the non-oxidized ones (Figure 6a), the current flow through the 2DEG was locally suppressed in the oxidized regions, which in turn exhibit a more resistive behaviour (Figure 6b).

For the Hall bar structures fabricated in our current 3C-SiC films, a high resistive behaviour for the undoped 3C-SiC films has been measured while the intentionally nitrogen doped films show around 4 6 × 1020/cm3 carrier concentration with a Hall mobility of around 2 cm2/V s.

One of the controllers is the positive-sequence control strategy and the second is the three-phase damping control strategy, which emulates a resistive behaviour towards the negative and zero-sequence voltage components and has originally been developed for mitigating unbalance in three-phase systems.

The resistive switching behaviour of the tri-layer ZrO2/ZrO2 − x /ZrO2 film was investigated as memory.

These native defects are credited as basis of resistive switching behaviour of the devices.

Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics.

From previous reports, it was believed that electrochemical migration of oxygen vacancies is the dominating factor in the resistive switching behaviour [31, 32].

The resistive switching behaviour of our sample exhibits a typical bipolar nature, that is, the sample device can only be written with a positive bias and erased with a negative one, as this happened in our sample device during numerous measurements.