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This resistance distribution reflects the presence of the TUCF phenomenon.
Figure 4 Resistance distribution of four states in 2-bit MLC PRAM.
It is a function of Rth 01,00), and the resistance distribution of state 00.
So, a uniform resistance distribution is also important for logic operation.
The resistance distribution of a total number of 15 devices is shown in Figure 4c.
In this article, we assume that the initial resistance distribution is Gaussian.
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Figure 3 Resistance distributions of the Ag/AlO x /Pt RRAM devices.
The SET and RESET resistance distributions were obtained by applying a programing current pulse, and the minimal RESET/SET ratio is more than 1 order of magnitude.
In this context, the presented built-in structure allows collecting statistical data related to the OxRRAM memory array (ON/OFF resistance distributions) for reliability assessment of the technology.
Thermal resistance distributions of foam and MLI were compared in detail, and their contributions to reduce the heat leakage were analyzed thoroughly.
The fatality probability exceeding a limit state can then be obtained by comparing pairs of samples from the load effect and the resistance distributions.
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