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For graphene included in a layered material, the annealing process eliminated the resist residue on the surface and increased conductance.
At last, resist residue was removed by Microposit Remover 1165 (Rohm and Haas, Philadelphia, PA, USA) and cleaned up with IPA and deionized water.
Also, it is thought that the resist residue included during the fabrication process might be eliminated by the post-annealing process.
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The devices were annealed at 200 °C in Ar atmosphere to eliminate resist residues and reduce contact resistance.
In principle, organic contaminants, including resist residues, should evaporate during the nitridation at high temperature.
Left side: (a) SEM and (c) AFM images of a nanopatterned Ti mask with resist residues (whiter spots).
However, similar growth features were always observed when some resist residues were present on the mask before the growth.
This simple and effective approach can be easily implemented in different resist-based lithography processes to fabricate carbon nano-devices that are free of resist residues.
However, in the spots where the resist residues lie, thinner NCs nucleate on the mask and grow faster than the ordered ones inside the holes.
When the surface of the patterned mask present resist residues, as shown in Figure 2a, c (SEM and AFM, respectively), GaN NCs still nucleate inside the holes and exhibit constant distribution, height, and diameter.
This point sounds trivial, though it is not always straightforward to identify resist residues over the mask or inside the holes, due to the high aspect ratio of the patterns and to the finite dimensions of the AFM tip.
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