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Although the radiation leads to a scattering of Ag ions into the film bulk, this scattering influence on the set and reset procedures is almost negligible.
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Figure 5 Abrupt set procedure and multistep reset procedure for oxide-based RRAM device [ 5 ].
Therefore, atomic-level quantized oxidation must exist between the different reaction layers during reset procedure.
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The dynamic switching mechanisms during reset procedure in RRAM were also clarified by a sequential experimental design.
In this experiment, we demonstrated that the reset procedure of RRAM device is a layer-by-layer oxidation process.
However, the dsw was increased with the increase of resistance value in different multi-HRS during the reset procedure.
This demonstrated that Schottky emission is considered as the main transport mechanism in multi-HRS during the reset procedure.
In order to clarify the switching mechanism, the resistance switching characteristics of RRAM were measured in the 4-K environment to eliminate the thermodynamic effects during reset procedure.
The ratio of initial and post-reactive numbers of atom corresponds to a specific ratio of resistance states during the reset procedure.
In view of the analytic results for multi-HRS during reset procedure, the carrier transport mechanism is understood to be converted from Ohmic conduction to Schottky emission.
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