Removal of defects is an alternative way to increase the material strength.
Removal of defects decreases the Raman peak width and increases the phonon lifetime in a larger rutile crystallite.
Manipulation of the mercury electrode's volume enables the introduction and removal of defects in the insulating thiol films.
This significant increase of decay time is related to reduction of nonradiative recombination and removal of defects due to thermal annealing [26, 27].
Removal of defects releases the strain and relaxes the lattice to its normal state, and thus, a negative strain η of 0.0006 is observed in complete rutile phase.
Removal of defects also reveals that a good software is consistently improved and feed backs are important part of open source systems.
In consistence with previous studies this can be explained by the removal of defects in the CO adlayer structure while cycling in CO saturated solution.
Temperature-dependent grain growth and anatase-to-rutile phase conversion of TiO2 involve creation of interface defects, atomic migration from the interface to grain interior, and then finally reconstruction of a new crystalline phase and removal of defects.
Unlike purification treatments, which are aimed at the removal of catalyst, support, or carbonaceous impurities, the removal of defects represents an improvement in graphitization similar to that used for carbon fibers.
