Sentence examples for relax the strain from inspiring English sources
Compositionally undulating step-graded InAsyP1−y buffer layers were grown by metal-organic chemical vapor deposition (MOCVD) to relax the strain of In0.68Ga0.32As with InP substrate.
We have investigated the simple physical effects controlling solute vacancy binding in Mg and find that there is a modest correlation between binding energy and solute size, with larger solute atoms more favorably binding with neighboring vacancies to relax the strain induced by the solutes.
Therefore, it requires further dislocation nucleation to relax the strain resulting higher TD densities in epilayer.
As the annealing temperature is increased, there is a redistribution of cation between the tetrahedral and octahedral sites in order to relax the strain at the lattice site.
Several local changes of volume and surface area in the curves indicate a complex deformation process that includes stepwise chain slipping and large configurational changes to relax the strain energy.
The heterojunction underlayers are thick enough to relax the strain caused by the lattice mismatch between GaN and AlN layers, but the heterojunction thin overlayers are only 5-nm thick and at least partially strained.
A controlling factor of the transformation kinetics appeared to be the rate in which the system can relax the strains due to the accompanying volume reduction of the precipitates.
The enhanced high-rate performance can be attributed to the 3D carbon-framework, which improves the electric conductivity, relaxes the strain stress and prevents the aggregation of Fe3O4 particles during the charge/discharge process.
For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (ϵ∗IP), there is a critical thickness above which interfacial defects form to relax the elastic strain energy.
With reducing the spacer thickness, more strain fields transmitted to the following layer; therefore, the growth proceeds in a more efficient approach to relax the accumulating strain.
The defects at the bottom of AlN NWs arise to relax the elastic strain.
