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Furthermore, the operational lifetime is beyond 15 folds of the reference device.
As reference device ITO/PEDOT PSS/P3HT PCBM (1:1, w/w)/Al was applied.
Data showed that in response to temperature fluctuations, the performance of both reference device and 10% device could be affected.
Preliminary photovoltaic experiments were carried out for two kinds of bulk heterojunction devices (BHJ) and compared with reference device.
As a result, device efficiency has been enhanced more than twice compared to single junction reference device.
We obtain a PCE enhancement of 90% from 2% for reference device to 3.8% with incorporation of Ag@4-choloraniline CSNPs.
And the PEC of PSC can be increased 7.85%, which is about 10.2% higher than that of the reference device without UC and DS.
The cold source enable the reference device to obtain the highest PCE of 6.75% due to an increase in open-circuit voltage (Voc).
The SIMBand is a reference device, a proof of concept.
It's a reference device built to allow networks to experiment.
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The device without PBL is referred to as reference device with the traditional three-layer structure.
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