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Rectifying behavior of the heterojunctions in the range of − 8 to 8 V for all of the samples are examined.
The current density-voltage characteristic of the resulting device exhibits clear rectifying behavior, with a rectification factor of 3 × 103 at V = ±1 V.
The I-V curve shows rectifying behavior as expected from these LEDs.
It shows rectifying behavior for the junctions indicating formation of a diode between ZnO and Si.
In the first case, rectifying behavior was observed, but not in the second.
It shows rectifying behavior more obviously as the device was measured in the wide voltage range.
It should follow that if electrons need to overcome a Schottky barrier in order to be injected from the Zn0.8Mg0.2O to the ITO, the current density voltage (J– V) curve should display rectifying behavior.
The heterojunction with an intrinsic layer and annealing treatment showed a good rectifying behavior.
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The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K.
Recently, without the need of a diode, RRAM devices with self-rectifying behavior have been widely developed because of the simpler process.
Particularly, after stacking a 28-nm-thick Ta2O5 layer on HfO2-x film, a pronounced self-rectifying behavior appeared in Device28.
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