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The numerical solution of the presented analytical model in the preceding section was employed, and rectification current voltage characteristic of TGN SB FET is plotted as shown in Figure 5. Figure 5 Simulated I D (μA) versus V DS (V) plots of TGN Schottky-barrier FET ( L = 25 nm, V GS = 0.5 V).
Violence was employed.
Another class of electron tubes is employed for rectification and switching (thyratrons and ignitrons).
The stereo rectification and column encoded patterns are employed to achieve the surface sample height information.
In order to cope with the high data rates and computational complexity, an advanced caching scheme for the rectification and hierarchical disparity estimation is employed.
are employed.
Visual tools are employed.
were employed.
Various methods are employed.
Three matrices were employed.
Maybe some sort of rectification was possible.
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