Your English writing platform
Discover LudwigExact(14)
Figure 2 shows that SiGe height (measured after four deposition cycles) increases with decreased recess width.
As shown in Fig. 1, various recess width and depth samples are prepared for this study.
Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm.
The influences of recess width, recess depth, and orientation effects on the step height of SiGe epitaxy are investigated.
Hence drive current increases and resistance decreases with increased recess width, recess depth, and SiGe step height.
Under a fixed recess width of 96.3 nm, the deeper the recess, the higher the growth rate of SiGe height.
Similar(45)
Compressive strain increases with increasing SiGe volume by silicon recess depth, width, and SiGe step height.
Square or rectangular recesses: Measure the width and length (shown in purple) of the recess (shown in green) as if it was a tiny room.
Round recesses: Measure the longest width and length of the recess (usually through the center) up until the edge of the main area, which you already measured.
The influence of restriction parameters, recess depth and land-width ratios on the load capacity and stability of a Jeffcott rotor supported by single-row, six-recessed hybrid bearings with capillary compensation is studied.
The input variables were the material conductivity as well as the radiation emissivity, length and width of the recesses.
More suggestions(3)
Write better and faster with AI suggestions while staying true to your unique style.
Since I tried Ludwig back in 2017, I have been constantly using it in both editing and translation. Ever since, I suggest it to my translators at ProSciEditing.

Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com