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Innovative migration enhanced embedded epitaxial (ME3) growth process was developed to replace the implantation process and realize high device performance.
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There have been a considerable number of studies focused on fabricating small nanogratings on large areas to realize high performance devices.
In fact, research in this area is already now becoming established [2, 3], but in order to realize high performance devices, the graphene transfer process should be optimized and any processing-related modifications to graphene's mechanical and electronic properties need to be properly characterized and understood.
It is highly desirable to realize high performance electronic and optical devices based on suspended graphene layers.
By using a pretightening force control device, the designed actuators can realize high accuracy and stability.
Therefore, it is very significant to study an azimuth-tuned tri-color shift device with 1D single period simple structure, which can simultaneously realize high reflection efficiencies for both TE and TM polarizations in specified bands.
Our results indicate the importance of obtaining monolayer graphene to realize high-performance graphene devices, as well as the necessity to use transport properties of photoexcited carriers for predicting the performance of graphene-based opto-electronics.
Another way to realize higher throughput analysis in microfluidic devices is by multiplexing, i.e., the simultaneous detection of multiple analytes in a sample present in one channel.
The recent rise of semiconductor nanowires opens new opportunities for realizing high efficiency photovoltaic devices at low cost due to the unique one-dimensional structure with remarkable electrical and optical properties.
The core/shell heterostructure design is expected to realize high-performance flexible supercapacitor for future portable and wearable electronic devices.
An In0.6Ga0.4N p-n junction solar cell, with optimal device parameters, can have a conversion efficiency approximately 21.5%, demonstrating that medium-indium content InGaN materials have the potential to realize high-efficiency solar cells.
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