Sentence examples for realization of memory from inspiring English sources

Aizawa (2007) criticizes Bickle's (2003) argument (discussed in section 2 above) that a unitary realization of memory consolidation across species has been found at the level of molecular mechanisms, despite widespread neural differences in these brains at higher levels of neuroscientific investigation.

The controlled martensitic transformations in such thin ribbons can be used for strengthening, realization of shape memory effects, improvement of magnetic (hysteretic) properties, regulation of thermal expansion coefficient, etc.

Rosenblum et al. [ 5] found that the realization of learning and memory function which is mediated by acetylcholine neurons depends on the activation of ERK1/2 signaling pathway.

But researchers who study memory do so because of the realization that the purpose of memory is not to nostalgically remember sleep-away camp or your graduation.

The present manuscript deals with the realization of processing In-memory (PIM) computing architecture using Quantum Dot Cellular Automata (QCA) and Akers array.

Moreover, there are extreme differences between individual realizations of external memories in terms of their access time and power consumption.

Moreover, due to the easy solution process, we demonstrated the design and realization of flexible GQD-based memory device.

Prospective memory has been variously defined as "remembering to do something in the future" [25], "remembering to do something in the future without being reminded" [26], "timely execution of an intended action at some point in the future" [27], "realization of delayed intentions" [10], "memory for activities to be performed in the future" [4], "remembering to remember" [28], and so on.

So here was what the dreaded realization of what my five years of memory rehearsals had been meant to stave off.

The present device is a realization of quantized conductance resistor with memory (memristor) in which the physical conduction is governed by integer and partial quantized conductance effects.

These results offer the realization of advanced heterostructural devices for nonvolatile memory applications.