Sentence examples for rate etching from inspiring English sources

The formation and accumulation of nonvolatile AlFx layer is known to be a serious issue for plasma etching processes: it causes process drifts (generating changes in etch rate, etching profile, selectivity, or uniformity) and metallic contamination of wafers [29, 30].

With this configuration, it is possible to maintain a stable reactive plasma jet producing SFx (x=1…5) radicals and free fluorine radicals for locally acting high rate etching techniques for Si-based materials like Si, SiC, and SiO2.

Properties of GCIB such as surface smoothing, high-rate etching and ease of forming a collimated beam are promising for novel precision machining.

The constant-rate etching method controls the influence factors as constants, such as temperature, etchant concentration, and time.

In order to eliminate the influence of these factors and improve the measurement accuracy, Wang and Li et al. [19, 53, 54] proposed the differential-rate etching method.

The constant-rate etching method has been widely used to measure SSD in optical glasses, ceramics, and semiconductor materials [2, 22, 50, 51, 52].

To understand and control the grain coalescence triggered by RIE, the effects of plasma power, ratio of gas flow rates, and etching rate of the Si substrate were systematically explored.

Previous study has reported that the rate of etching depends on the type and concentration of the acid used [ 35].

There are constant- and differential-rate inspection methods based on etching rate.

Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM).

Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding.