In this section, we describe the basic structure of the STT-RAM cell including its read/write operations (see the next section), sources of its errors (see "STT-RAM error model" section), and circuit-level techniques to reduce them (see "Circuit-level techniques for reducing error " section).
Similarly for STT-RAM, the hard error rate can be reduced by tuning the W/L ratios of the access transistors, boosting the voltage, and adjusting the write pulse width.
As described in "PRAM reliability" and "STT-RAM reliability" sections, raw error rate of MLC PRAM and STT-RAM can significantly be reduced using circuit-level techniques.
He had a second serve to attack, but instead he landed it short in the service box, and again Granollers ran around and dictated with a forehand, forcing a forehand error from Ram into the net.
Development of circuit-level techniques for STT-RAM that reduces the error rate due to judicious use of increase in W/L ratio of the access transistor, higher voltage difference across the memory cell, and pulse width adjustment in write operation.
Watson, who was content to be the human backboard to Sharapova's battering ram, finished with 30 unforced errors and 9 winners (to Sharapova's 41).
A few weeks earlier Phenomedia, which introduced Germans to the Moorhuhn, a cartoon bird, and Sven, a fun-loving ram, had owned up to accounting errors.
Since the error rate of STT-RAM does not change with data storage time or number of programming cycles, it only uses the ECC scheme BCH 2084,2048) on block size of 2048 bits to achieve BFR = 10 8.
We add the variation effects to the nominal HSPICE model of STT-RAM and use Monte Carlo simulations to generate the error rates caused by each variation.
To achieve the target BFR for both STT-RAM and PRAM, performances of ECC schemes with different error correction capabilities are shown in Figure24.
