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Figure 1 RAM cell structure[4].
Therefore, the system can be used as a random access memory (RAM) cell.
In this paper, by employing the structure of multiplexer, a novel RAM cell architecture is proposed.
By employing this structure, a novel RAM cell architecture with set and reset ability is proposed.
In this paper, two improved structures have been proposed for a loop-based Random Access Memory (RAM) cell.
In addition, a new RAM cell with set and reset capabilities is designed based on the proposed majority gate, which has an efficient and low-energy structure.
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In this paper, design and simulation of novel random access memory (RAM) cells using single electron tunneling (SET) technology based threshold logic gate (TLG) are presented.
Figure 14 Basic STT-RAM cell structure.
The reliability of an STT-RAM cell has been investigated by several researchers.
In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed.
Such a structure removes the GSHE control transistor from each GSHE-RAM cell and hence, substantially reduces the memory cell area.
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