The proposed system proves this assumption to be right.
However, further studies are obviously required to prove this assumption.
To prove this assumption, gassing has been investigated to induce nucleation during batch cooling crystallization.
However, unsatisfactory little effort has been spent to prove this assumption experimentally.
Further experiments of carbon growth on SrTiO3 or YSZ at different temperatures might prove this assumption.
To prove this assumption, we manipulated untreated Ag NWs, which have a well-defined pentagonal cross section [28].
To prove this assumption, a phantom simulation study needs to be conducted which is out of the scope of this paper.
In order to prove this assumption, we have prepared a hydrogen-free mixture of K2TaF7 + 5.175ZnF2 + 10.35 NaN3 composition and combusted under 2.0 MPa nitrogen pressure.
To prove this assumption, surface picture was taken by plan-view SEM. Figure 4a shows a SEM image of the Si surface.
To prove this assumption we investigated the sensitivity of A. nidulans FGSC A4 strain towards 100 µg/mL CFW, and 100 µg/mL CFW in combination with 200 µg/mL NFAP.
