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A structural model is proposed to interpret the experimental results.
A mechanism is proposed to interpret these results.
Microscopic growth mechanisms are also proposed to interpret both syntheses.
A SA-VS growth mechanism is proposed to interpret the formation of the SiC nanochain.
Several theoretical models have been proposed to interpret the threshold switching from different scientific perspective.
Hereby, an extended PUC model is proposed to interpret the GNW's growth process on diamond surface.
The space charge capacitance and the quantum capacitance models have been proposed to interpret the phenomena.
A simplified analytical model is proposed to interpret the experimental results.
A SA-VS growth mechanism is further proposed to interpret the growth mechanism of the uniform single-crystalline SiC nanochains.
A speed-alternating vapor solid (SA-VS) growth mechanism is proposed to interpret the formation of this typical nanochains.
Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration.
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