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We report on optoelectronic properties of devices based on Si/Si1−xGex systems.
"We will work on improving the mechanical properties of composite materials, and addressing the electrical properties of devices, to develop exceptionally sensitive sensors for a range of applications in environmental monitoring and the medical sciences".
In addition, cross-stacking MoS2/graphene was demonstrated onto a flexible polyethylene terephthalate (PET) substrate for the analysis of physical properties of devices.
The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3×1014 cm−2.
In this work we present the electro-optical properties of devices based on randomly oriented diamond films, synthesized in a microwave plasma enhanced chemical vapor deposition reactor.
The balanced charge injection properties of devices as well as the nonplanar structures of the emitting materials have the profound effects on the EL efficiencies.
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Photovoltaic properties of device with the structure of Al/C60/a-C/indium tin oxide/glass are presented.
Photocurrent value depends on the extrinsic properties of device such as applied bias and electrode inter-distance and the intrinsic properties of material such as carrier mobility and lifetime.
Although a large number of studies have focused on improving the intrinsic electrical properties of device fabrication techniques, the influence of in situ annealing treatment in the research field of spray-coated OFETs has not received much attention.
AFM phase images of grain boundaries in MoS2; effects of current annealing on MoS2 devices; summarized electrical properties of MoS2 devices.
The complete metrological list of terms divided into 5 main headings are Quantities and Units, Measurement, Devices for Measurement, Properties of Measuring Devices, and Measurement Standards (Etalons) and can be found in the Joint Committee for Guides in Metrology.
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