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This depends on different programming currents, which can be used for MLC.
The first three levels are the SET with different programming currents, and the fourth level is the RESET condition.
The good active and leakage currents achieved by the purposely optimized selecting transistors combined with programming currents of 300 μA of the storage element and good distributions measured on the 128 Mb array demonstrate the suitability of the proposed architecture for the production of high-density PCM arrays at 90 nm and beyond.
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The programming current is also reduced to 25 μA [31].
The programming current and pulse width are 100 μA and 5 ns, respectively.
Moreover, MRAM needs high programming current (in the range of milliampere) [6].
A new protruding yoke wire was proposed and investigated for reduction of programming current of magnetic random access memory (MRAM).
However, typically high programming current to operate devices is a fatal problem in comparison with flash memory.
By doing so, we can separate the memristor's current from the programming current to change the state variable that is stored at the capacitor C1.
If the memristor's current is not separated from the programming current, the state variable that decides memristance value can be maintained only at the moment when the programming voltage or current is applied to the memristor.
Higher programming current results in larger amorphous volume, which takes more time to become crystalline, shows higher resistance than desired value after a SET operation.
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