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In 1999, Kozicki et al. [7] reported a programmable metallization cell (PMC) device using metal-doped chalcogenide films.
The electrochemical metallization (ECM -based RRAM with an activECM -basedectRRAM such as Ag or Cu is referred to as programmable metallization cell (PMC) or conductive bridge RAM (CBRAM), withh is an importactivepe of RRAmetalicelectrode
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications.
The proposed cell consists of a 6 T SRAM core, a resistive RAM made of a transistor and a Programmable Metallization Cell.
Programmable metallization cell.
In some cases, the ECM device is also called as conductive bridge random access memory (CBRAM) [115 119], programmable metallization cell (PMC) [120 122], and atomic switch [115 119, 123, 124].
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Au, Cr, Ni, and Pd metals were used for metallization.
One answer is programmable logic.
Synthesis of programmable integrases.
TSV, through silicon via; UBM, under bump metallization.
A trillion colors are programmable.
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