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With the mixture of Dirichlet processes, the bias was always less than 3.5% for N between 100 and 200, and less than 6.8% for N below 100.
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If common mechanisms drive both processes, the biasing effect of flanker orientation should also vary across the UVF and LVF.
During all scanning process, the bias voltage and tunneling current was kept at 1.5 V and 0.19 nA, respectively.
In the set process, the bias was applied into the device to switch the device from HRS to LRS, with which the sudden increase of current could be observed, as shown in Figure 4a.
This interdependence between mutation and selection reflects the deep influence that mutation has on the evolutionary process: The bias in the mutation influences the thermodynamic properties of the evolving proteins, in agreement with comparative studies of bacterial proteomes, and it also influences the rate of accepted mutations.
By combining the pulsed processes of the bias voltage as well as of a metal plasma ion implantation (MPII), the substrate temperature was kept below 160 °C.
b The suggested circuits of the charging and discharging processes under the bias voltage.
The suggested circuits of the charging and discharging processes under the bias voltage are shown in Fig. 4b.
In this circular process, the biases of readers play no small role.
The technique uses in-line, non-contact monitoring of the blending process, eliminating the bias introduced by commonly used powder sampling techniques.
The substrate temperature, resulting from the sputtering process and the bias voltage, ranged from 433 K at zero voltage to 523 K at 450 V.
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