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Operational framework was mapped through questions related to the GHI processes, areas of work, funding and outlook.
The majority of work in these centers focuses on basic cellular and molecular biological processes, areas that are mainstays of research at NIGMS.
Although the electrical resistance is decreased by the mechanical processing without vibration, additional electrical processing on the mechanically processed area further increases the electrical resistance of the surface.
In contrast, with additional mechanical processing, the depth of the electrically processed area became nearly 0.74 nm, thinner than that of the reacted SiO2.
In addition, the increased friction force of the electrically processed area was decreased by the subsequent mechanical processing.
Additional electrical processing caused protuberance at the center of the mechanically processed area; however, the height was as low as <1 nm.
EDX analysis of the processed area indicated that the bismuth component remained after FIB processing.
Then, it is possible to recover the conductivity of the electrically processed area because of removal of the oxide layer by mechanical processing without vibration.
The electric resistance of the mechanically processed area can then be increased because of oxidization by additional electrical processing.
Figure 3 SEM image of the FIB processed area.
Inset of (d) shows optical microscope image of the processed area.
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