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The characteristic breakthrough curves of the adsorption process were measured.
The height and width of the alveolar process were measured as well.
Residual stress profiles resulting from each ion exchange process were measured with an optical technique.
The kinetics of this process were measured locally by TEM (Moiré fringes) and X-ray diffraction.
Basic mechanical properties of pore free SiCN made by this process were measured.
The current-voltage (I-V) and optical characteristics of the GaN TF-LED following the PCE process were measured.
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Hence, the amount of useful spectral information is directly related to the process being measured.
The water depth for the welding process is measured as the depth changes.
In doing so the sensor filter system was characterized and the loading process was measured capacitively.
The effectiveness of the process was measured by indirect performance criteria such as solid/liquid separation.
The mixing process was measured and quantified by image analysis of this visible layer.
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