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Process pressure affected chemical composition of Ti C:H films.
Also, the sheet resistance decreased with decreasing process pressure.
Hazards of aerosols formed from leaks are classified qualitatively using process pressure and droplet sizes.
By decreasing the process pressure, the etch rate of the TaN thin film was also increased.
Typical gas flows were 500 and 100 sccm, respectively; typical process pressure was 1 mbar.
Raman spectroscopic analysis showed that structural disorder increases with increase in the process pressure.
The corrosion potential and current density decreased as process pressure increased.
Depending on the process pressure the two growth regimes were identified.
The discharge pressure developed will be the pressure at the discharge flange caused by the process pressure and system resistance.
This paper details corrosion that occurred in two identical process pressure vessels during the first 4 years of operation.
The steam-to-carbon ratio and the process pressure are found to have a significant impact on the process efficiency.
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