Exact(12)
Single-grain thin-film transistors (SG-TFTs) fabricated inside location-controlled using μ-Czochralski process exhibit SOI-FETs like performance despite processing temperatures remaining below 350 °C.
TiSiCN coatings prepared with the acetonitrile process exhibit a nanocomposite structure of nanocrystalline TiCxNy and amorphous SiCxNy.
The diamond films synthesized in this process exhibit smaller crystallites and contain smaller amount of non-diamond carbon phases.
In addition, the electric potential generated in the direct flexoelectric process and the deflection generated in the converse flexoelectric process exhibit obvious size-dependency.
TIPS-pentacene and TES-ADT OFETs fabricated in this simple process exhibit characteristics indicative of correctly functioning high-performance field-effect transistors with very good linearity in the accumulation and saturation regimes and a charge carrier mobility in the range μ=0.1 0.4 cm2 V−1 s−1, comparable to the optimized devices reproducibly obtained on high-quality Si/SiO2 wafers11,12.
Thermal barrier coatings (TBCs), deposited onto turbine components using the electron-beam physical vapor deposition (EB-PVD) process, exhibit unique pore architectures capable of bridging the technological gap between insulation/life extension and prime reliance.
Similar(48)
The process exhibits an excellent printing accuracy.
Under pumping, the growth process exhibits a unique organized behavior unprecedented otherwise.
This organization of the optimization process exhibits several evident advantages.
The biochemical reactor process exhibits high degree of non linearity.
Compared to conventional lithographic techniques, this process exhibits the advantages of low cost and high efficiency.
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