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Two graphite electrodes are installed in the middle of the process chamber.
The top of the process chamber is a liftable cap with a hollow cavity inside.
The process chamber pressure is maintained below 4 × 10−4Torr by a turbo pump.
The working pressure adjusted by N2 inlet into the process chamber ranges from 50 100 mbar.
The calculations included also the impact of the protective argon atmosphere located in the process chamber.
This system mainly consists of four parts: a process chamber, a pumping system, a gauge system, and a heating system.
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Therefore, a cluster-type in-line machine concept was developed with dedicated process chambers that allows deposition of coatings with high throughput at low costs of ownership.
The difference in particle number density profiles for both process chambers can help to understand the difference in performance of both Wurster coater designs.
There are many sources of surface contaminants in the process chambers including materials of wafer heaters or evaporators of elements as well as foreign substances used for epitaxy and doping.
Although extensive studies have been pursued to identity cell surface molecules on ESCs (Nunomura et al. 2005; Intoh et al. 2009) and to uncover the molecular mechanisms underlying the maintenance of the undifferentiated state and regulation of the differentiation process (Chambers & Tomlinson 2009; Young 2011), ESC-specific cell surface proteins, or markers, are not fully understood.
In contrast, rounding process and chamber location are extremely significant.
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