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The pellets were then subjected to a quick firing process at 1180 °C.
Gd2(Zr1−xNbx)2O7+x (0 ≤ x ≤ 0.2) ceramics are prepared via the solid state reaction process at 1973 K for 10 h in air.
The results showed that AlN was the major product of the nitriding process at 1050 °C for 25 h.
Carbon spheres (CSs) have been subjected to a high temperature annealing process at 2800 °C under an Ar atmosphere.
We next investigate the morphology evolution of Si NW arrays during the thermal oxidation process at 1000 °C.
β-SiC nanowires were synthesized by using an improved simple and low-cost thermal evaporation process at 1500 °C, without argon protect and catalyst assistant.
A homogenized dual phase Fe 24%Mn 8.3%Al 5%Cr 0.38%Si 0.34%Mo 0.45%C cast alloy was chromized with a pack cementation process at 1000 °C for 1 16 h.
Silicon carbon nitrogen material (SiCN) is pyrolyzed from polysilylethylenediamine (PSEDA) derivation, followed by a heat-treating process at 1000 °C in Ar atmosphere.
Three-dimensional braided carbon fiber-reinforced ZrC matrix composites, 3-D Cf/ZrC, were fabricated by Liquid metal infiltration process at 1200 °C.
The spin-coating process at 5,000 rpm for 10 s was used to prepare BaWO4 films with thickness of about 2 μm.
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