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Not every golfer claims to have a pristine memory.
Figure 1 TEM images and EDX analysis of a Cu/Ge0.4Se0.6/W pristine memory device.
(a) TEM image of a Cu/Ge0.4Se0.6/W pristine memory device with a scale bar of 50 nm.
A pristine memory device with high initial resistance state (IRS) can be switched in to a low-resistance state (LRS) by applying a high voltage stress.
A high bias voltage with predefined current compliance (ICC) of 100 μA was applied to the pristine memory cell to initiate the RS into the Lu2O3 thin film, as shown in Figure 4a.
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In dusty pages, pristine memories can live.
(a) Formation characteristics of the pristine resistive memory devices under NF and PF.
When the pristine resistive memory device is formed using positive polarity bias on the TE, it is termed as PF, while the negative voltage-formed device is termed as an NF device.
In classic sci-fi style they meet a mystery man named Z (played with calm lucidity by Scott Sedar), whose memory is pristine.
Low mechanical strength and low thermal stability of pristine epoxy-based shape memory polymer (ESMP) hinder its practical applications, and the usually used reinforcing fillers are expensive.
One of the reasons resides in the self-nucleation phenomenon of one-polymorph on itself, i.e., a nucleating "memory" of pristine crystalline structure surviving the melting process.
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Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com