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The pristine device shows very low leakage current (arrow 1).
a I-V characteristics of a pristine device under negative bias.
The mechanism of Cu pillar formation inside the pristine device is as follows.
No RESET current was observed for the first switching cycle of the pristine device.
Therefore, the potential drop on a pristine device is higher across the TiO x layer.
The pristine device is measured to be in the high-resistance state as shown in Fig. 4b.
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The pristine devices show low leakage current.
I-V measurements for pristine devices S1 and S2 are shown in Figure 5a,b.
The I-V characteristics of randomly measured 50 pristine devices with two different sizes viz.
All pristine devices display high initial resistances, indicating that the as-deposited films are in the amorphous state.
Figure 4a shows current voltage (I-V) characteristics of randomly measured 100 pristine devices in an Al/Cu/Al2O3/TiN structure.
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