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The prepared device shows stable electrochemical behaviors at random bending angles.
The prepared device was the same as that for conduct electrical transport property measurement in Fig. 5a, b.
We found a V th = -1.92 V for the as prepared device and V th = -0.8 V for the processed device.
The measured average values of ( {K}_{mathrm{eff}}^2 ) and Q were 2.39 % and 224, indicating a high performance of the prepared device.
The prepared device exhibits a high specific energy of 27.2 Wh kg−1 and a high specific power 24.8 kW kg−1.
The interface state between the metal oxide and polymer layers in the prepared device is critical determining factor for the optical performance and physical of polymer light emitting diodes.
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Fig. 2 Plot of the relative permittivity of the prepared devices versus CA concentration.
The prepared devices have been measured with a maximum output power of 3.2 W.
CL and EL studies were carried out for the investigation of luminescence response of the prepared devices.
The freshly prepared devices consistently showed an inflection point in the IV curve indicative of a rather poor photovoltaic behavior.
Fig. 1 Chemical structures of a 2CzPN, b m-CP, and c CA. The measured permittivities of the prepared devices are shown in Fig. 2.
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