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The plasma power, chamber pressure, and substrate temperature for the growth of Si NCs were fixed at 5 W, 500 mTorr, and 250°C, respectively.
Gas flow rates, RF power, chamber pressure and deposition duration were process variables that have been investigated in detail and will be reported elsewhere.
A 23 full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films.
Using this reactor, i.e. thermal plasma processing, ferrite particles with high purity are synthesized directly from powder mixtures under various processing conditions (i.e. jet power, chamber pressure and substrate position).
Using this reactor, i.e. thermal plasma processing, ferrite films and particles with high purity were synthesized directly from powder mixtures under various processing conditions (jet power, chamber pressure, substrate position and processing duration time).
Similar(55)
The deposition power and chamber pressure were 100 W and 6 mTorr, respectively.
Electrophoresis was done with EC-3000 p-series powerandable power and chamber supply units (E.C. Apparatus Corporation) using cellulose acetate strips.
Film growth is examined under a range of conditions including applicator substrate distance, microwave power and chamber pressure.
Numerical simulation of multi-phase flow is essential to evaluate the feasibility of a liquid protection scheme for the power plant chamber.
The I-optimal design was employed to set up the etching experiment with operating parameters, namely, gas composition, RF power and chamber pressure.
Design of Experiments was utilized to determine if deposition parameters including the bias-voltage, heating power, and chamber pressure have a significant influence regarding critical scratch load, hardness to Young's modulus ratio, and electrical resistance.
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