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The cross-sectional electrostatic potential profiles are plotted in Fig. 3.
These effects are responsible for changes in the bending of the potential profiles.
Figure 5 Potential profiles corresponding to HFETs with V DS,stress.
d Corresponding potential profiles at V bg = − 5, 0, and 5 V, respectively.
Besides, the electrode displayed two flat potential profiles during the charge/discharge process.
In Fig. 3c, the numerical potential profiles are obtained by the spatial integration of E x in Fig. 3b.
This study helps to reveal the spatial potential profiles and analyze the impact of contact in the device.
Channel bandstructures and electrostatics (charge and potential profiles) under gate biases are determined self-consistently with Schrödinger-Poisson simulations.
Figure 4 Cross sections of the electron concentration distribution at a closed-gate condition and cross-sectional potential profiles.
Their height and potential profiles of an individual QR along the marked line are shown in (c).
The pathophysiological determinants of different aura phenotypes and related differences in interictal visual evoked potential profiles remain speculative.
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