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This affects the surface potential profile.
In other words the shielding only modified the potential profile across the QW.
The mean potential profile is then given by the nonlinear Poisson Boltzmann (PB) equation.
Figure 1 shows the schematic potential profile and carrier dynamics in our device.
The orientation of the dipoles alter the potential profile in proximity of and inside the channel.
This result relates to the potential profile, as discussed later in this subsection.
Figure 2 CB potential profile, sub-band energies, and wave functions.
Inside the semiconductor, the potential profile depends on the density of holes, electrons, and ionized impurities.
The resistivity and permittivity show a slight change after the inflection point in the potential profile.
Local adhesion failures caused non-uniformity in the potential profile measured by SKP.
The potential profile for dendritic growth also well correlates with the optical observations.
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