Sentence examples for position of quantum from inspiring English sources

The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial.

To suppress the mode competition, the position of quantum well was optimized, common symmetric waveguide is replaced by the asymmetric one based on the distribution of various modes in optical field.

Self-assembled growth of Stranski Krastanow islands on pre-patterned substrates has attracted great interest [1 20] because it provides an effective route for positioning of quantum dots in nano-electronic devices.

The position of 585 quantum dots was subtracted from the quantum dot 655 labeled dyneins to correct for MT oscillations.

We have highlighted a phenomenon of coherent localization of the position of a quantum walker in its position space taking place when the parameter of the coin operation is chosen to be small.

The standard deviation of the position of 585 quantum dots was 35 nm in perpendicular direction and 17 nm in parallel direction to the long axis of the MTs.

Because of this random structure, position space representation of quantum mechanics breaks down and so a generalized normed space of quasi-position eigenfunction is required.

Because of this random structure, position space representation of quantum mechanics breaks down, and therefore a generalized normed space of quasiposition eigenfunction is required.

Examples of this type of initial data are the position and momentum operators of quantum oscillators and the occupation number operator in many-body particle systems.

For example, the special case in which (i=j) in the standard linearization formula (2) is very useful when evaluating the logarithmic potentials of orthogonal polynomials appearing in the calculation of the position and momentum information entropies of quantum systems (see Dehesa et al. [1] and Tcheutia [2]).

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer.